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| SFH 520 SFH 520 A ---Strahlungsdetektoren ---Radiation Detectors SFH 520 SFH 520 A Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Eigenschaften Substratscheibe: Chipdicke: Vorderseite: Ruckseite: 4600 1400 cm 381 15 m Aluminiumkontakt 1,4 m Aluminiumabdeckung ganzflachig 0.1 m 0,4 m Gold/Arsen q Kleiner Dunkelstrom q Niedrige Kapazitat q Hohe Durchbruchspannung ermoglicht Betrieb bei voll ausgeraumten Chip Features Substrate: Chip thickness: Topside: Backside: 4600 1400 cm 381 15 m Aluminium contact 1.4 m Aluminium total cover 0.1 m 0.4 m Au/As q Low dark current q Low capacitance q High breakdown voltage permits operation at full depletion Typ Type SFH 520 SFH 520 A Bestellnummer Ordering Code Q62702-P419 Q62702-P429 485 10.95 Semiconductor Group fes06874 SFH 520 SFH 520 A Kennwerte Characteristics Bezeichnung Description Sperrspannung Breakdown voltage 100 A Dunkelstrom Dark current 100 V 160 V Fluspannung Forward voltage 100 mA Kapazitat Capacitance f = 1 MHz, Ev = 0 80 V 150 V Kapazitat pro cm2 Capacitance per cm2 120 V Betriebsspannung Operating voltage Ladungstrager - Lebensdauer Charge carrier lifetime Symbol Symbol Wert Value > 180 Einheit Unit V VR IR (< 15) 10 (< 20) nA VF 0.7 (< 2.0) V C 12 10 pF C/cm2 32 pF Vop - 90 ... 120 10 V msec. Current and Capacitance Characteristics per cm2 Semiconductor Group 486 |
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